Temperature Dependence of Raman-Active In-Plane E<sub>2g</sub> Phonons in Layered Graphene and h-BN Flakes.
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Abstract | :
Thermal properties of sp2 systems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E2g optical phonon peaks (~ 1580 cm-1 in graphene layers and ~ 1362 cm-1 in h-BN layers) as a function of temperature from - 194 to 200 °C. The h-BN flakes show higher sensitivity to temperature-dependent frequency shifts and broadenings than graphene flakes. Moreover, the thermal effect in the c direction on phonon frequency in h-BN layers is more sensitive than that in graphene layers but on phonon broadening in h-BN layers is similar as that in graphene layers. These results are very useful to understand the thermal properties and related physical mechanisms in h-BN and graphene flakes for applications of thermal devices. |
Year of Publication | :
2018
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Journal | :
Nanoscale research letters
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Volume | :
13
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Issue | :
1
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Number of Pages | :
25
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Date Published | :
2018
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ISSN Number | :
1931-7573
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URL | :
https://dx.doi.org/10.1186/s11671-018-2444-2
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DOI | :
10.1186/s11671-018-2444-2
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Short Title | :
Nanoscale Res Lett
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